4v drive nch mosfet RSF015N06 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) built-in g-s protection diode. 2) small surface mount package (tumt3). 3) low voltage drive. (4v) ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 3000 RSF015N06 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 1.5 a pulsed i dp ? 6.0 a continuous i s 0.6 a pulsed i sp 6.0 a power dissipation p d 0.8 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 156 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter tumt3 0.2max. * abbreviated symbol : px *2 *1 *1 *1 *1 *1 (1) gate (2) source (3) drain ?2 ?1 (3) (1) (2) ?1 esd protection diode ?2 body diode 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSF015N06 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 210 290 i d =1.5a, v gs =10v - 240 330 i d =1.5a, v gs =4.5v - 255 350 i d =1.5a, v gs =4.0v forward transfer admittance l y fs l 1.0 - - s i d =1.5a, v ds =10v input capacitance c iss - 110 - pf v ds =10v output capacitance c oss - 28 - pf v gs =0v reverse transfer capacitance c rss - 12 - pf f=1mhz turn-on delay time t d(on) -6-nsi d =0.7a, v dd 30v rise time t r -9-nsv gs =10v turn-off delay time t d(off) - 15 - ns r l =42.8 ? fall time t f - 10 - ns r g =10 ? total gate charge q g - 2.0 - nc i d =1.5a gate-source charge q gs - 0.8 - nc v dd 30v gate-drain charge q gd - 0.5 - nc v gs =5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =1.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSF015N06 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = 2.4v ta=25 c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 v gs = 2.4v ta=25 c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 10000 0.01 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v . ta= 25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 10000 0.01 0.1 1 10 v gs = 10v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 10000 0.01 0.1 1 10 v gs = 4.5v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSF015N06 10 100 1000 10000 0.01 0.1 1 10 v gs = 4.0v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= - 25 c ta=25 c ta=75 c ta=125 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.9 source current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 100 200 300 400 500 600 0 5 10 15 20 ta=25 c pulsed i d = 0.7a i d = 1.5a fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25 c v dd = 30v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 1 2 3 4 ta=25 c v dd = 30v i d = 1.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSF015N06 1 10 100 1000 0.01 0.1 1 10 100 ciss crss ta=25 c f=1mhz v gs =0v coss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSF015N06 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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